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ILD1615/ ILQ1615
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel), 110 C Rated
Features
* Operating temperature from - 55 C to + 110 C * Identical Channel to Channel Footprint e3 * Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection * Isolation Test Voltage, 5300 VRMS * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Dual Channel
A1 C2 A3 C4
8C 7E 6C 5E
Quad Channel
A1 C2 A C A C A
3 4 5 6 7
16 C 15 E 14 C 13 E 12 C 11 E 10 C 9E
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * BSI IEC60950 IEC60065 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1
C8
i179052
Description
The ILD/Q1615 are multi-channel 110 C rated phototransistor optocouplers that use GaAs IRLED emiters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 VACPEAK and a working voltage of 1700 VRMS. The binned min./max. and linear CTR characteristics make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD/Q1615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy
worst case interface calculations for both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at IF = 1.0 mA.
Order Information
Part ILD1615-1 ILQ1615-1 ILD1615-2 ILQ1615-2 ILD1615-3 ILQ1615-3 ILD1615-4 ILQ1615-4 Remarks CTR 40 - 80 %, DIP-8 CTR 40 - 80 %, DIP-16 CTR 63 - 125 %, DIP-8 CTR 63 - 125 %, DIP-16 CTR 100 - 200 %, DIP-8 CTR 100 - 200 %, DIP-16 CTR 160 - 320 %, DIP-8 CTR 160 - 320 %, DIP-16
For additional information on the available options refer to Option Information.
Document Number 82582 Rev. 1.5, 23-Mar-06
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ILD1615/ ILQ1615
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage Forward current Surge current Power dissipation Derate linearly from 25 C Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 1.5 100 1.0 Unit V mA A mW mW/C
Output
Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current t < 1.0 ms Power dissipation Derate linearly from 25 C Test condition Symbol BVCEO BVECO IC IC Pdiss Value 70 7.0 50 100 150 1.5 Unit V V mA mA mW mW/C
Coupler
Parameter Storage temperature Operating temperature Soldering temperature Package power dissipation, ILD1615 Derate linearly from 25 C Package power dissipation, ILQ1615 Derate linearly from 25 C Isolation test voltage Creepage Clearance Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C RIO RIO t = 1.0 sec. VISO 2.0 mm distance from case bottom Test condition Symbol Tstg Tamb Tsld Value - 55 to + 150 - 55 to + 110 260 400 5.33 500 6.67 5300 7.0 7.0 1012 10
11
Unit C C C mW mW/C mW mW/C VRMS mm mm
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Document Number 82582 Rev. 1.5, 23-Mar-06
ILD1615/ ILQ1615
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Breakdown voltage Reverse current Capacitance Test condition IF = 10 mA IR = 10 A VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF VBR IR CO Min 1.0 6.0 Typ. 1.15 30 0.01 25 10 Max 1.3 Unit V V A pF
Output
Parameter Collector-emitter capacitance Collector-emitter leakage current, -1, -2 Collector-emitter breakdown voltage Emitter-collector breakdown voltage Package transfer characteristics Channel/Channel CTR match IF = 10 mA, VCE = 5.0 V CTRX/ CTRY 1 to 1 2 to 1 Test condition VCE = 5.0 V, f = 1.0 MHz VCE = 10 V Symbol CCE ICEO ICEO BVCEO BVECO 70 7.0 Min Typ. 6.8 2.0 5.0 50 100 Max Unit pF nA nA V V
Collector-emitter leakage, -3, -4 VCE = 10 V ICE = 0.5 mA IE = 0.1 mA
Coupler
Parameter Capacitance (input-output) Insulation resistance Channel to channel isolation Test condition VIO = 0 V, f = 1.0 MHz VIO = 500 V, TA = 25 C Symbol CIO RS 1012 500 Min Typ. 0.8 1014 Max Unit pF VAC
Current Transfer Ratio
Parameter Current Transfer Ratio (collector-emitter saturated) Test condition IF = 10 mA, VCE = 0.4 V Part ILD1615-1 ILQ1615-1 ILD1615-2 ILQ1615-2 ILD1615-3 ILQ1615-3 ILD1615-4 ILQ1615-4 Symbol CTRCEsat CTRCEsat CTRCEsat CTRCEsat Min Typ. 25 40 60 100 Max Unit % % % %
Document Number 82582 Rev. 1.5, 23-Mar-06
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ILD1615/ ILQ1615
Vishay Semiconductors
Parameter Current Transfer Ratio (collector-emitter) Test condition IF = 10 mA, VCE = 5.0 V IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCE = 5.0 V IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCE = 5.0 V IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCE = 5.0 V IF = 1.0 mA, VCE = 5.0 V Part ILD1615-1 ILQ1615-1 ILD1615-1 ILQ1615-1 ILD1615-2 ILQ1615-2 ILD1615-2 ILQ1615-2 ILD1615-3 ILQ1615-3 ILD1615-3 ILQ1615-3 ILD1615-4 ILQ1615-4 ILD1615-4 ILQ1615-4 Symbol CTRCE CTRCE CTRCE CTRCE CTRCE CTRCE CTRCE CTRCE Min 40 13 63 22 100 34 160 56 Typ. 60 30 80 45 150 70 200 90 320 200 125 Max 80 Unit % % % % % % % %
Switching Characteristics
Non-saturated Parameter Turn-on time Rise time Turn-off time Fall time Propagation H-L Propagation L-H Saturated Parameter Turn-on time Test condition IF = 20 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V Part ILD1615-1 ILQ1615-1 ILD1615-2 ILQ1615-2 ILD1615-3 ILQ1615-3 IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V Rise time IF = 20 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V ILD1615-4 ILQ1615-4 ILD1615-1 ILQ1615-1 ILD1615-2 ILQ1615-2 ILD1615-3 ILQ1615-3 IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V ILD1615-4 ILQ1615-4 Symbol ton ton ton ton tr tr tr tr Min Typ. 3.0 4.3 4.3 6.0 2.0 2.8 2.8 4.6 Max Unit s s s s s s s s Test condition IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP IF = 10 mA, VCC = 5.0 V, RL = 75 , 50 % of VPP Symbol ton tr toff tf tPHL tPLH Min Typ. 3.0 2.0 2.3 2.0 1.1 2.5 Max Unit s s s s s s
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Document Number 82582 Rev. 1.5, 23-Mar-06
ILD1615/ ILQ1615
Vishay Semiconductors
Parameter Turn-off time Test condition IF = 20 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V Part ILD1615-1 ILQ1615-1 ILD1615-2 ILQ1615-2 ILD1615-3 ILQ1615-3 IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V Fall time IF = 20 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V IF = 10 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V ILD1615-4 ILQ1615-4 ILD1615-1 ILQ1615-1 ILD1615-2 ILQ1615-2 ILD1615-3 ILQ1615-3 IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V Propagation H-L IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V ILD1615-4 ILQ1615-4 ILD1615-1 ILQ1615-1 ILD1615-2 ILQ1615-2 ILD1615-3 ILQ1615-3 ILD1615-4 ILQ1615-4 Propagation L-H IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 k, VHT 1.5 V ILD1615-1 ILQ1615-1 ILD1615-2 ILQ1615-2 ILD1615-3 ILQ1615-3 ILD1615-4 ILQ1615-4 Symbol toff toff toff toff tf tf tf tf tPHL tPHL tPHL tPHL tPLH tPLH tPLH tPLH Min Typ. 18 25 25 25 11 14 14 15 1.6 2.6 2.6 5.4 8.6 7.2 7.2 7.4 Max Unit s s s s s s s s s s s s s s s s
Common Mode Transient Immunity
Parameter Common mode rejection output high Common mode rejection output low Common mode coupling capacitance Test condition VCM = 50 VP-P, RL = 1.0 k, IF = 0 mA VCM = 50 VP-P, RL = 1.0 k, IF = 10 mA Symbol CMH CML CCM Min Typ. 5000 5000 0.01 Max Unit V/s V/s pF
Document Number 82582 Rev. 1.5, 23-Mar-06
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ILD1615/ ILQ1615
Vishay Semiconductors Typical Characteristics
Tamb = 25 C, unless otherwise specified
400 350 P - Power Dissipation (mW) tot
10000 1000 40 V
300 250 200 150 100 50 0 0 20 40 60 80 100 120 0.10 - 75
18734
Detector LED
I CE0 (nA)
100 24 V 10 1 12 V
18731
Tamb - Ambient Temperature (C)
- 25 25 75 125 Tamb - Ambient Temperature (C)
Figure 1. Permissible Power Dissipation vs. Temperature Non-Saturation Operation
Figure 4. Collector to Emitter Dark Current vs. Ambient Temperature
1.5 1.4 V F - Forward Voltage (V) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.10
17596
30 - 55 C 0 C 20 I C (mA) 25 mA
25 C 50 C 110 C
10 mA 10 5 mA 2 mA 0 0.0 0.1 0.2 0.3 0.4 1 mA 0.5 0.6
1.00
10.00
100.00
18735
IF - Forward Current (mA)
VCE - Collector to Emitter Voltage (V)
Figure 2. Forward Voltage vs. Forward Current
Figure 5. Normalized Current vs. Collector Emitter Saturation Voltage
45 IC - Collector Current (mA) 40 35 30 25 20 15 10 5 0
18733
CTR Norm - Normalized Output Current
50 IF = 30 mA
1.2 1.0 10 mA 0.8 0.6 0.4 0.2 Normalized to IF = 10 mA, Tamb = 25 C, VCE= 0.4 V, saturated 1 mA IF = 5 mA
IF = 20 mA IF = 15 mA IF = 10 mA IF = 5 mA I F = 1 mA 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VCE - Collector Emitter Voltage (V)
17597
0.0 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (C)
Figure 3. Collector Current vs. Collector Emitter Voltage
Figure 6. Normalized Current Transfer Ratio vs. Ambient Temperature
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Document Number 82582 Rev. 1.5, 23-Mar-06
ILD1615/ ILQ1615
Vishay Semiconductors
CTRNorm - Normalized Output Current
10 mA 0.90 0.80 5 mA 0.70 0.60 1 mA 0.50 0.40 Normalized to Temp = 25 C at 0.30 IF = 10 mA and VCE = 5 V 0.20 0.10 0.00 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (C) 18737
1.20 1.10 1.00
1000 Pulse Width = 100 ms IF = 10 mA Duty Cycle = 50 % Switching Time (s) 100
toff 10 ton
1 0.1
18340
1.0 10.0 R L - Load Resistance (k)
100.0
Figure 7. Normalized CTR vs. Temperature
Figure 10. Forward Resistance vs. Forward Current
CTR Norm - Normalized Output Current
1.2 -1 1.0 0.8 0.6 -3 0.4 0.2 0.0 0.10 -4 Normalized to IF = 10 mA, Tamb = 25 C, VCE= 0.4 V, saturated 1.00 10.00 100.00 -2 Switching Time (ms)
1000 Pulse Width = 100 ms IF = 10 mA Duty Cycle = 50 % 100
trise 10 t fall
1 0.1
18341
17598
IF - Forward Current (mA)
1 10 R L - Load Resistance (k)
100
Figure 8. Normalized CTR vs. Forward Current
Figure 11. Forward Resistance vs. Forward Current
CTR Norm - Normalized Output Current
1.2 -2 -1 1.0 0.8 0.6 0.4 0.2 0.0 0.10 Normalized to IF = 10 mA, Tamb = 25 C, VCE= 5 V, non-saturated 1.00 10.00 IF - Forward Current (mA) 100.00 -3 -4
17599
Figure 9. Normalized CTR vs. Forward Current
Document Number 82582 Rev. 1.5, 23-Mar-06
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ILD1615/ ILQ1615
Vishay Semiconductors Package Dimensions in Inches (mm)
pin one ID 4 0.255 (6.48) 0.268 (6.81) 5 6 7 8
ISO Method A
3
2
1
0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 4 typ. 0.130 (3.30) 0.150 (3.81) 0.050 (1.27) 0.018 (0.46) 0.022 (0.56)
i178006
0.300 (7.62) 0.031(0.79) typ.
0.230 (5.84) 10 0.020 (0.51) 0.035 (0.89) 0.100 (2.54) typ. 3 - 9 0.008 (0.20) 0.012 (0.30) 0.110 (2.79) 0.130 (3.30) 0.250 (6.35)
Package Dimensions in Inches (mm)
pin one ID 8 7 6 5 4 3 2 1 0.255 (6.48) 0.265 (6.81) 9 10 11 12 13 14 15 16
ISO Method A
0.779 (19.77 ) 0.790 (20.07) 0.030 (0.76) 0.045 (1.14) 0.031(0.79) 0.130 (3.30) 0.150 (3.81) 4 0.018 (0.46) 0.022 (0.56)
i178007
0.300 (7.62) typ. 0.110 (2.79) 0.130 (3.30) 0.230 (5.84) 0.250 (6.35)
0.020 (0.51) 0.035 (0.89) 0.100 (2.54) typ. 0.050 (1.27)
10 typ. 3 - 9
0.008 (0.20) 0.012 (0.30)
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Document Number 82582 Rev. 1.5, 23-Mar-06
ILD1615/ ILQ1615
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 82582 Rev. 1.5, 23-Mar-06
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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